Corporation (NASDAQ: SNDK),
a global leader in flash storage solutions, today announced the
availability of its 1Z-nanometer (nm) technology, the most advanced NAND
flash process node in the world. The 15nm technology will ramp on both
two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory
architectures with production ramp to begin in the second half of 2014.
"We are thrilled to continue our technology leadership with the
industry's most advanced flash memory process node, enabling us to
deliver the world's smallest and most cost effective 128 gigabit chips,"
said Dr. Siva Sivaram, senior vice president, memory technology,
SanDisk. "We are delighted that these new chips will allow us to further
differentiate and expand our portfolio of NAND flash solutions."
he 15nm technology uses many advanced process innovations and
cell-design solutions to scale the chips along both axes. SanDisk's
All-Bit-Line (ABL) architecture, which contains proprietary programming
algorithms and multi-level data storage management schemes, has been
implemented in the 1Z technology to deliver NAND flash solutions with no
sacrifice in memory performance or reliability. SanDisk's 1Z technology
will be utilized across its broad range of solutions, from removable
cards to enterprise SSDs.
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 company,
is a global leader in flash storage solutions. For more than 25 years,
SanDisk has expanded the possibilities of storage, providing trusted and
innovative products that have transformed the electronics industry.
Today, SanDisk's quality, state-of-the-art solutions are at the heart of
many of the world's largest data centers, and embedded in advanced smart
phones, tablets and PCs. SanDisk's consumer products are available at
hundreds of thousands of retail stores worldwide. For more information,
© 2014 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk
logo are trademarks of SanDisk Corporation, registered in the United
States and other countries. Other brand names mentioned herein are for
identification purposes only and may be the trademarks of their
This news release contains certain forward-looking statements, including
expectations for technology and product introductions, wafer production,
technology and product capabilities, costs and performance and markets
that are based on our current expectations and involve numerous risks
and uncertainties that may cause these forward-looking statements to be
inaccurate. Risks that may cause these forward-looking statements to be
inaccurate include among others: our 1Z nanometer process technology,
our X2 and X3 NAND memory architectures or our solutions utilizing these
new technologies may not be available when we expect or in the
capacities that we expect or perform as expected, or the other risks
detailed from time-to-time in our Securities and Exchange Commission
filings and reports, including, but not limited to, our most recent
annual report on Form 10-K. We do not intend to update the information
contained in this press release.
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