Efficient Power Conversion Corporation, the world's leader in
enhancement-mode gallium nitride on silicon (eGaN®) power
transistors, will be making presentations at three industry-leading
power conferences in Asia.
At two conferences in Shanghai, China on March 18th, EPC technical
experts will be presenting how gallium nitride (GaN) power devices have
emerged as higher efficiency replacements for the aging silicon (Si)
power MOSFETs. Specifically, increases in performance offered by eGaN
FETs in wireless power transfer (WiPo) applications will be presented.
Examples of increased performances include a new power conversion design
that delivers up to 20% improvement in efficiency and a second design
delivering up to 30 W operating with loosely coupled coils in the 6.78
MHz ISM band.
On April 10, EPC's CEO and Co-founder Dr. Alex Lidow will be giving an
update on GaN technology entitled, "Crushing Silicon with GaN." This
presentation will highlight key new applications, latest products
on the market, latest road maps into the future, and the relative
competitive position of GaN with the power MOSFET and silicon carbide.
Summary of Upcoming EPC Conferences in Asia:
"Improving Wireless Energy Transfer Performance with eGaN®
April 10, 2014
Dr. Alex Lidow, EPC CEO and Co-founder
"These three key Asian industry conferences provide EPC an opportunity
to meet with practicing power system design engineers and share the
attributes of GaN technology and how eGaN FETs can increase performance
and efficiencies in their power system designs," said Alex Lidow.
About Electronica China 2014
Electronica China is the leading trade platform for electronic
components and systems in China and Asia Pacific. Growth of a decade has
established Electronica China a name for its "high-end applications and
technological innovations." A series of international innovation forums
addressing important application trends and growth markets offer the
electronic communities in China the latest industry trends and
solutions. Visit www.epc-co.com.cn
About IIC China - Spring Conference 2014
IIC-China is the country's annual systems design event where engineers,
technology vendors and new ideas meet. On its 19th year, the event
brings you face-to-face with China's design innovators as they look for
new technology and design ideas. The Power Management and Semiconductor
Conference will serve as educational opportunity for engineers on hot
topics and emerging technologies. Visit www.epc-co.com.cn
About Wide Band Gap Power Electronics Consortium
Established in 2011, the Consortium aims to integrate industry
enterprises relating to Wide Band Gap power electronics technology, give
impetus to technical exchanges and cooperation, and to promote resources
integration of power electronics industry and industrialization.
International Workshop on WBG Power Electronics (IWWPE) aims to build a
platform for sharing experiences, opinions and expectations in this
field. In this workshop a dozen of experts on power electronics
Technology Trend/Application, Device/Fabrication, Package/Reliability,
Materials/Equipment, and vendors for the WBG power electronics will be
invited to give lectures. Visit www.epc-co.com.tw
EPC is the leader in enhancement-mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
power transfer, envelope
tracking, RF transmission, solar micro inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
Visit our web site: www.epc-co.com.
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828.Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP.Like
EPC on Facebook at http://www.facebook.com/EPC.Corporation.
eGaN is a registered trademark of Efficient Power Conversion
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