Efficient Power Conversion Corporation (EPC) introduces a family of
development boards, the EPC9022 through EPC9030, to simplify evaluation
of the groundbreaking EPC8000 family of ultra high frequency eGaN power
family of high frequency eGaN FETs has switching transition speeds
in the sub-nanosecond range, making them capable of hard-switching
applications above 10 MHz - blurring the line between power and RF
transistors! Even beyond the 10 MHz for which they were designed, these
products exhibit very good small signal RF performance with high gain
well into the low GHz range, making them a competitive choice for RF
applications. They are ideal for applications, such as wireless power
and 65 V and 100 V devices for envelope tracking, where extremely fast
power transistor switching is required.
Products in the EPC8000 family are available with on-resistance values
from 125 mO through 530 mO, and three blocking voltage capabilities, 40
V, 65 V and 100 V.
To simplify the evaluation of this family of high frequency, high
performance eGaN FETs, EPC is offering a development board for each
device in this new product family. The development boards are 2" x 1.5"
and contain two eGaN FETs in a half-bridge configuration with minimum
switching frequency of 500 kHz. The boards contain all critical
components and layout for optimal high frequency switching performance.
There are various probe points to facilitate simple waveform measurement
and efficiency calculation.
EPC8000 Family Product Specifications and Corresponding Development
RDS(on) Max (mO) (VGS = 5
V, ID =0.5 A)
Peak ID Min (A) (Pulsed,
25 °C,Tpulse = 300 µs)
Evaluation units of the EPC8000 family of devices are immediately
available in 2- and 10-piece packs starting at $23 through Digi-Key
Corporation at http://bit.ly/EPC80xxDK
EPC9022 through EPC9030 development boards are priced at $150 each and
are available for immediate delivery from Digi-Key at http://bit.ly/EPC902xDK
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
power transfer, envelope
tracking, RF transmission, solar micro inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
Visit our web site: www.epc-co.com.
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
or text "EPC" to 22828
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook at http://www.facebook.com/EPC.Corporation
eGaN is a registered trademark of Efficient Power Conversion
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