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[February 10, 2014]
Freescale Semiconductor Assigned Patent for Method of Making Semiconductor Structure Useful in Making Split Gate Non-volatile Memory Cell
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Feb. 10 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,643,123) developed by Cheong M. Hong, Austin, Texas, and Brian A. Winstead, Austin, Texas, for a "method of making a semiconductor structure useful in making a split gate non-volatile memory cell." The patent application was filed on April 13, 2011 (13/085,533). The full-text of the patent can be found at
Written by Balkishan Dalai; edited by Jaya Anand.
BD0210JA0210-977108 (c) 2014 Targeted News Service
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