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[February 10, 2013]
GlobalFoundries and Synopsys Join Forces to Supply Design Environment for Foundry's 14 nm-XM FinFET Offering [Manufacturing Close - Up]
(Manufacturing Close - Up Via Acquire Media NewsEdge) GlobalFoundries and Synopsys, Inc. announced the two companies have partnered to deliver a design solution to accelerate the implementation of GlobalFoundries' 14 nm-XM FinFET offering.
According to a release, the solution includes Synopsys' DesignWare Embedded Memory and Logic Library IP; design tools from the Galaxy Implementation Platform; and TCAD process and device simulation tools, all optimized to enable design teams to achieve desired performance, power and area requirements in the most efficient, low-risk manner. The collaborative development is built on the industry's first modular FinFET technology, which combines a 14 nanometer (nm) FinFET device with elements of GlobalFoundries' 20 nm-LPM process to reduce risk and accelerate time to volume.
"We have a long-standing relationship with Synopsys that has resulted in a wide range of proven design implementation solutions for our mutual customers. The compelling benefits available through our new 14 nanometer-XM FinFET technology, particularly in addressing the requirements of mobile device SoCs, will be much more accessible and efficient to realize thanks to this latest collaboration," said Mike Noonen, executive vice president of marketing, sales, design and quality at GlobalFoundries. "The combination of our advanced process and Synopsys' IP, design and manufacturing tools design environment will give customers the performance and power benefits of three-dimensional FinFET transistors with less risk and a faster time-to-market." FinFET transistors are a significant change from planar devices. GlobalFoundries collaborated with Synopsys on TCAD to model and simulate the changes and to speed up the process development and performance optimization of its FinFET devices. In addition, these devices and the associated shrinking of process geometry at 14nm impact parasitic extraction, SPICE modeling of the devices, routing rules, and IP development. GlobalFoundries and Synopsys collaborated closely to minimize the impact of these changes and ensure smooth adoption of FinFET technology by design teams. Synopsys' portfolio of DesignWare Embedded Memory and Logic Library IP is architected to achieve the full benefits of GlobalFoundries' 14 nm-XM FinFET technology. The IP delivers results in the areas of performance, leakage and dynamic power, and low voltage operation.
"Synopsys has a history of strong collaboration with GlobalFoundries to bring advanced process technologies to the market," said John Chilton, senior vice president, marketing and strategic development, at Synopsys, Inc. "Our collaboration on FinFET is built on this foundation. It focuses on enabling design teams to take full advantage of GlobalFoundries' investment in 14 nanometer process technology and the significant benefits it brings to next-generation semiconductor designs." According to a release, the 14 nm-XM offering is based on a modular technology architecture that uses a 14nm FinFET device combined with elements of GlobalFoundries' 20 nm-LPM process, which is well on its way to production. Technology development is already underway, with test silicon running through GlobalFoundries' Fab 8 in Saratoga County, N.Y. The XM stands for "eXtreme Mobility," and it a non-planar architecture that is truly optimized for mobile system-on-chip (SoC) designs, providing a whole product solution from the transistor all the way up to the system level. The technology is expected to deliver a 40-60 percent improvement in battery life when compared to today's two-dimensional planar transistors at the 20 nm node.
More information: www.globalfoundries.com www.synopsys.com ((Comments on this story may be sent to firstname.lastname@example.org)) (c) 2013 ProQuest Information and Learning Company; All Rights Reserved.
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