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[February 02, 2013]
Semiconductor Components Industries Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Feb. 2 -- Semiconductor Components Industries, Phoenix, has been assigned a patent (8,362,548) developed by Peter A. Burke, Portland, Ore., Gordon M. Grivna, Mesa, Ariz., and Prasad Venkatraman, Gilbert, Ariz., for a "contact structure for semiconductor device having trench shield electrode and method." The abstract of the patent published by the U.S. Patent and Trademark Office states: "In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench structure. Contact is made to the gate electrode and the shield electrode within or inside of the trench structure. A thick passivating layer surrounds the shield electrode in the contact portion." The patent application was filed on Nov. 14, 2008 (12/271,030). The full-text of the patent can be found at
Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,362,548&OS=8,362,548&RS=8,362,548 Written by Arpi Sharma; edited by Anand Kumar.
AS0202AK0202-836875 (c) 2013 Targeted News Service
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